Serveur d'exploration sur le nickel au Maghreb

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Characterization of irradiation defects using positron annihilation spectroscopy in γ-NiSb and δ-Ni2Si intermetallic phases

Identifieur interne : 001133 ( Main/Exploration ); précédent : 001132; suivant : 001134

Characterization of irradiation defects using positron annihilation spectroscopy in γ-NiSb and δ-Ni2Si intermetallic phases

Auteurs : A. Jennane [France] ; J. Bernardini [France] ; P. Moser [France] ; G. Moya

Source :

RBID : Pascal:93-0091114

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English descriptors

Abstract

γ-NiSb and δ-Ni2Si phases were studied using positron annihilation spectroscopy after electron irradiation at 20 K (E=3 MeV; dose, about 5 × 1018 e- cm-2). Isochronal spectra of the πm positron average lifetime and of the Doppler broadening parameter R showed the same evolution for both compounds studied. Recombination of mobile interstitials with vacancies for NiSb occurred between 100 and 250 K although nickel vacancy migration occurred at approximately 400 K and formed dislocation loops


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Le document en format XML

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<title xml:lang="en" level="a">Characterization of irradiation defects using positron annihilation spectroscopy in γ-NiSb and δ-Ni
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Si intermetallic phases</title>
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<term>Antimony Nickel Alloys</term>
<term>Dislocation</term>
<term>Electron beam</term>
<term>Intermetallic compound</term>
<term>Interstitial</term>
<term>Irradiation</term>
<term>Irradiation defect</term>
<term>Nickel Silicon Alloys</term>
<term>Positron annihilation</term>
<term>Vacancy</term>
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<term>Défaut irradiation</term>
<term>Irradiation</term>
<term>Annihilation positon</term>
<term>Composé intermétallique</term>
<term>Antimoine Nickel Alliage</term>
<term>Interstitiel</term>
<term>Lacune</term>
<term>Dislocation</term>
<term>Nickel Silicium Alliage</term>
<term>Faisceau électronique</term>
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<term>Irradiation</term>
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<div type="abstract" xml:lang="en">γ-NiSb and δ-Ni
<sub>2</sub>
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e
<sup>-</sup>
cm
<sup>-2</sup>
). Isochronal spectra of the π
<sub>m</sub>
positron average lifetime and of the Doppler broadening parameter R showed the same evolution for both compounds studied. Recombination of mobile interstitials with vacancies for NiSb occurred between 100 and 250 K although nickel vacancy migration occurred at approximately 400 K and formed dislocation loops</div>
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